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SISH106DN-T1-GE3

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SISH106DN-T1-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 27 nC @ 4.5 V

FET Feature : -

Product Status : Active

Mounting Type : Surface Mount

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Series : TrenchFET®

Vgs (Max) : ±12V

Vgs(th) (Max) @ Id : 1.5V @ 250µA

Supplier Device Package : PowerPAK® 1212-8SH

Rds On (Max) @ Id, Vgs : 6.2mOhm @ 19.5A, 4.5V

Mfr : Vishay Siliconix

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V

Power Dissipation (Max) : 1.5W (Ta)

Package / Case : PowerPAK® 1212-8SH

Drain to Source Voltage (Vdss) : 20 V

Current - Continuous Drain (Id) @ 25°C : 12.5A (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : SISH106

Description : MOSFET N-CH 20V 12.5A PPAK

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N-Channel 20 V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

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