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UNR421900A

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UNR421900A

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors

Current - Collector (Ic) (Max) : 100 mA

Product Status : Obsolete

Transistor Type : NPN - Pre-Biased

Frequency - Transition : 150 MHz

Mounting Type : Through Hole

Package : Cut Tape (CT) Tape & Box (TB)

Series : -

Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA

Voltage - Collector Emitter Breakdown (Max) : 50 V

Supplier Device Package : NS-B1

Resistor - Base (R1) : 1 kOhms

Mfr : Panasonic Electronic Components

Resistor - Emitter Base (R2) : 10 kOhms

Current - Collector Cutoff (Max) : 500nA

Power - Max : 300 mW

Package / Case : 3-SIP

DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 10V

Base Product Number : UNR421

Description : TRANS PREBIAS NPN 300MW NS-B1

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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1

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