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SSM3J168F,LF

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SSM3J168F,LF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2V @ 1mA

Operating Temperature : 150°C

Package / Case : TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs : 3 nC @ 10 V

Rds On (Max) @ Id, Vgs : 1.9Ohm @ 100mA, 4.5V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : +20V, -16V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 82 pF @ 10 V

Mounting Type : Surface Mount

Series : U-MOSVI

Supplier Device Package : SOT-23-3

Mfr : Toshiba Semiconductor and Storage

Current - Continuous Drain (Id) @ 25°C : 400mA (Ta)

Power Dissipation (Max) : 1.2W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : SSM3J168

Description : MOSFET P-CH 60V 400MA S-MINI

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P-Channel 60 V 400mA (Ta) 1.2W (Ta) Surface Mount SOT-23-3

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