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ISC012N04LM6ATMA1

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ISC012N04LM6ATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.3V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : 8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs : 64 nC @ 10 V

Rds On (Max) @ Id, Vgs : 1.2mOhm @ 50A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 40 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 4600 pF @ 20 V

Mounting Type : Surface Mount

Series : OptiMOS™ 6

Supplier Device Package : PG-TDSON-8 FL

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 37A (Ta), 238A (Tc)

Power Dissipation (Max) : 3W (Ta), 125W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : ISC012N

Description : TRENCH <= 40V PG-TDSON-8

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N-Channel 40 V 37A (Ta), 238A (Tc) 3W (Ta), 125W (Tc) Surface Mount PG-TDSON-8 FL

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