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FQP9N90C

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FQP9N90C

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 58 nC @ 10 V

Rds On (Max) @ Id, Vgs : 1.4Ohm @ 4A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 900 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2730 pF @ 25 V

Mounting Type : Through Hole

Series : QFET®

Supplier Device Package : TO-220-3

Mfr : onsemi

Current - Continuous Drain (Id) @ 25°C : 8A (Tc)

Power Dissipation (Max) : 205W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : FQP9

Description : MOSFET N-CH 900V 8A TO220-3

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N-Channel 900 V 8A (Tc) 205W (Tc) Through Hole TO-220-3

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