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IRFHM3911TRPBF

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IRFHM3911TRPBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 35µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs : 26 nC @ 10 V

Rds On (Max) @ Id, Vgs : 115mOhm @ 6.3A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 760 pF @ 50 V

Mounting Type : Surface Mount

Series : HEXFET®

Supplier Device Package : 8-PQFN (3x3)

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 3.2A (Ta), 20A (Tc)

Power Dissipation (Max) : 2.8W (Ta), 29W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFHM3911

Description : MOSFET N-CH 100V 3.2A/20A 8PQFN

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N-Channel 100 V 3.2A (Ta), 20A (Tc) 2.8W (Ta), 29W (Tc) Surface Mount 8-PQFN (3x3)

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