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TSM1NB60CP ROG

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TSM1NB60CP ROG

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.5V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs : 6.1 nC @ 10 V

Rds On (Max) @ Id, Vgs : 10Ohm @ 500mA, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 600 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 138 pF @ 25 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : TO-252, (D-Pak)

Mfr : Taiwan Semiconductor Corporation

Current - Continuous Drain (Id) @ 25°C : 1A (Tc)

Power Dissipation (Max) : 39W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : TSM1NB60

Description : MOSFET N-CHANNEL 600V 1A TO252

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N-Channel 600 V 1A (Tc) 39W (Tc) Surface Mount TO-252, (D-Pak)

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