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TK5R1P08QM,RQ

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TK5R1P08QM,RQ

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 56 nC @ 10 V

Product Status : Active

Mounting Type : Surface Mount

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds : 3980 pF @ 40 V

Series : U-MOSX-H

Vgs (Max) : ±20V

Vgs(th) (Max) @ Id : 3.5V @ 700µA

Supplier Device Package : DPAK

Rds On (Max) @ Id, Vgs : 5.1mOhm @ 42A, 10V

Mfr : Toshiba Semiconductor and Storage

Operating Temperature : 175°C

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Power Dissipation (Max) : 104W (Tc)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) : 80 V

Current - Continuous Drain (Id) @ 25°C : 84A (Tc)

Technology : MOSFET (Metal Oxide)

FET Feature : -

Description : UMOS10 DPAK 80V 5.1MOHM

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N-Channel 80 V 84A (Tc) 104W (Tc) Surface Mount DPAK

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