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IRF510SPBF

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IRF510SPBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 8.3 nC @ 10 V

Rds On (Max) @ Id, Vgs : 540mOhm @ 3.4A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 180 pF @ 25 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : D²PAK (TO-263)

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 5.6A (Tc)

Power Dissipation (Max) : 3.7W (Ta), 43W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRF510

Description : MOSFET N-CH 100V 5.6A D2PAK

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N-Channel 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D²PAK (TO-263)

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