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TP65H050WS

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TP65H050WS

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.8V @ 700µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-247-3

Gate Charge (Qg) (Max) @ Vgs : 24 nC @ 10 V

Rds On (Max) @ Id, Vgs : 60mOhm @ 22A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 12V

Package : Tube

Drain to Source Voltage (Vdss) : 650 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1000 pF @ 400 V

Mounting Type : Through Hole

Series : -

Supplier Device Package : TO-247-3

Mfr : Transphorm

Current - Continuous Drain (Id) @ 25°C : 34A (Tc)

Power Dissipation (Max) : 119W (Tc)

Technology : GaNFET (Cascode Gallium Nitride FET)

Base Product Number : TP65H050

Description : GANFET N-CH 650V 34A TO247-3

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N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3

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