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NVH4L040N120SC1

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NVH4L040N120SC1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.3V @ 10mA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-247-4

Gate Charge (Qg) (Max) @ Vgs : 106 nC @ 20 V

Rds On (Max) @ Id, Vgs : 56mOhm @ 35A, 20V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 20V

Package : Tube

Drain to Source Voltage (Vdss) : 1200 V

Vgs (Max) : +25V, -15V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1762 pF @ 800 V

Mounting Type : Through Hole

Series : Automotive, AEC-Q101

Supplier Device Package : TO-247-4L

Mfr : onsemi

Current - Continuous Drain (Id) @ 25°C : 58A (Tc)

Power Dissipation (Max) : 319W (Tc)

Technology : SiCFET (Silicon Carbide)

Base Product Number : NVH4L040

Description : SICFET N-CH 1200V 58A TO247-4

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N-Channel 1200 V 58A (Tc) 319W (Tc) Through Hole TO-247-4L

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