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PSMN1R9-40PLQ

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PSMN1R9-40PLQ

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.1V @ 1mA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 120 nC @ 5 V

Rds On (Max) @ Id, Vgs : 1.7mOhm @ 25A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tube

Drain to Source Voltage (Vdss) : 40 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 13200 pF @ 25 V

Mounting Type : Through Hole

Series : -

Supplier Device Package : TO-220AB

Mfr : Nexperia USA Inc.

Current - Continuous Drain (Id) @ 25°C : 150A (Tc)

Power Dissipation (Max) : 349W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : PSMN1R9

Description : MOSFET N-CH 40V 150A TO220AB

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N-Channel 40 V 150A (Tc) 349W (Tc) Through Hole TO-220AB

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