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IXTX40P50P

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IXTX40P50P

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 1mA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-247-3 Variant

Gate Charge (Qg) (Max) @ Vgs : 205 nC @ 10 V

Rds On (Max) @ Id, Vgs : 230mOhm @ 20A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 500 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 11500 pF @ 25 V

Mounting Type : Through Hole

Series : PolarP™

Supplier Device Package : PLUS247™-3

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 40A (Tc)

Power Dissipation (Max) : 890W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXTX40

Description : MOSFET P-CH 500V 40A PLUS247-3

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P-Channel 500 V 40A (Tc) 890W (Tc) Through Hole PLUS247™-3

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