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IPB65R660CFDAATMA1

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IPB65R660CFDAATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.5V @ 200µA

Operating Temperature : -40°C ~ 150°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 20 nC @ 10 V

Rds On (Max) @ Id, Vgs : 660mOhm @ 3.2A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 650 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 543 pF @ 100 V

Mounting Type : Surface Mount

Series : Automotive, AEC-Q101, CoolMOS™

Supplier Device Package : PG-TO263-3

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 6A (Tc)

Power Dissipation (Max) : 62.5W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPB65R660

Description : MOSFET N-CH 650V 6A D2PAK

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N-Channel 650 V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263-3

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