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IMBG120R090M1HXTMA1

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IMBG120R090M1HXTMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type : N-Channel

FET Feature : Standard

Product Status : Active

Mounting Type : Surface Mount

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Vgs(th) (Max) @ Id : 5.7V @ 3.7mA

Series : CoolSiC™

Vgs (Max) : +18V, -15V

Gate Charge (Qg) (Max) @ Vgs : 23 nC @ 18 V

Supplier Device Package : PG-TO263-7-12

Rds On (Max) @ Id, Vgs : 125mOhm @ 8.5A, 18V

Mfr : Infineon Technologies

Operating Temperature : -55°C ~ 175°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds : 763 pF @ 800 V

Drain to Source Voltage (Vdss) : 1200 V

Power Dissipation (Max) : 136W (Tc)

Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Current - Continuous Drain (Id) @ 25°C : 26A (Tc)

Technology : SiCFET (Silicon Carbide)

Base Product Number : IMBG120

Description : SICFET N-CH 1.2KV 26A TO263

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N-Channel 1200 V 26A (Tc) 136W (Tc) Surface Mount PG-TO263-7-12

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