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IXTH6N100D2

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IXTH6N100D2

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : Depletion Mode

Vgs(th) (Max) @ Id : -

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-247-3

Gate Charge (Qg) (Max) @ Vgs : 95 nC @ 5 V

Rds On (Max) @ Id, Vgs : 2.2Ohm @ 3A, 0V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : -

Package : Tube

Drain to Source Voltage (Vdss) : 1000 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2650 pF @ 25 V

Mounting Type : Through Hole

Series : Depletion

Supplier Device Package : TO-247 (IXTH)

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 6A (Tc)

Power Dissipation (Max) : 300W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXTH6

Description : MOSFET N-CH 1000V 6A TO247

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N-Channel 1000 V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

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