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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 4V @ 250µA
Operating Temperature : -55°C ~ 175°C (TJ)
Package / Case : TO-220-3
Gate Charge (Qg) (Max) @ Vgs : 20 nC @ 10 V
Rds On (Max) @ Id, Vgs : 70mOhm @ 10A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tube
Drain to Source Voltage (Vdss) : 55 V
Vgs (Max) : ±20V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 370 pF @ 25 V
Mounting Type : Through Hole
Series : HEXFET®
Supplier Device Package : TO-220AB
Mfr : Infineon Technologies
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Power Dissipation (Max) : 45W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : IRFZ24
Description : MOSFET N-CH 55V 17A TO220AB
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