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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Operating Temperature : -55°C ~ 150°C (TJ)
Package / Case : PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs : 41 nC @ 10 V
Rds On (Max) @ Id, Vgs : 4.8mOhm @ 20A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 20 V
Vgs (Max) : ±20V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 1600 pF @ 10 V
Mounting Type : Surface Mount
Series : TrenchFET®
Supplier Device Package : PowerPAK® 1212-8
Mfr : Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C : 35A (Tc)
Power Dissipation (Max) : 3.8W (Ta), 52W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : SIS410
Description : MOSFET N-CH 20V 35A PPAK 1212-8
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SIS410DN-T1-GE3 Images |
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