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IPC100N04S51R7ATMA1

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IPC100N04S51R7ATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.4V @ 60µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : 8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs : 83 nC @ 10 V

Rds On (Max) @ Id, Vgs : 1.7mOhm @ 50A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 7V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 40 V

Vgs (Max) : ±20V

Product Status : Not For New Designs

Input Capacitance (Ciss) (Max) @ Vds : 4810 pF @ 25 V

Mounting Type : Surface Mount

Series : OptiMOS™

Supplier Device Package : PG-TDSON-8-34

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 100A (Tc)

Power Dissipation (Max) : 115W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPC100

Description : MOSFET N-CH 40V 100A 8TDSON-34

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N-Channel 40 V 100A (Tc) 115W (Tc) Surface Mount PG-TDSON-8-34

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