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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 5.5V @ 500µA
Operating Temperature : -55°C ~ 175°C (TJ)
Package / Case : TO-247-3
Gate Charge (Qg) (Max) @ Vgs : 11 nC @ 20 V
Rds On (Max) @ Id, Vgs : 1.2Ohm @ 2A, 20V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 20V
Package : Tube
Drain to Source Voltage (Vdss) : 1700 V
Vgs (Max) : +25V, -10V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 111 pF @ 1000 V
Mounting Type : Through Hole
Series : G2R™
Supplier Device Package : TO-247-3
Mfr : GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
Power Dissipation (Max) : 44W (Tc)
Technology : SiCFET (Silicon Carbide)
Base Product Number : G2R1000
Description : SIC MOSFET N-CH 4A TO247-3
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G2R1000MT17D Images |
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