Sign In | Join Free | My xxjcy.com
China Beijing Silk Road Enterprise Management Services Co.,LTD logo
Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
Verified Supplier

3 Years

Home > Single FETs, MOSFETs >

G2R1000MT17D

Product Categories
Beijing Silk Road Enterprise Management Services Co.,LTD
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

G2R1000MT17D

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5.5V @ 500µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-247-3

Gate Charge (Qg) (Max) @ Vgs : 11 nC @ 20 V

Rds On (Max) @ Id, Vgs : 1.2Ohm @ 2A, 20V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 20V

Package : Tube

Drain to Source Voltage (Vdss) : 1700 V

Vgs (Max) : +25V, -10V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 111 pF @ 1000 V

Mounting Type : Through Hole

Series : G2R™

Supplier Device Package : TO-247-3

Mfr : GeneSiC Semiconductor

Current - Continuous Drain (Id) @ 25°C : 5A (Tc)

Power Dissipation (Max) : 44W (Tc)

Technology : SiCFET (Silicon Carbide)

Base Product Number : G2R1000

Description : SIC MOSFET N-CH 4A TO247-3

Contact Now

N-Channel 1700 V 5A (Tc) 44W (Tc) Through Hole TO-247-3
Buy cheap G2R1000MT17D product

G2R1000MT17D Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Beijing Silk Road Enterprise Management Services Co.,LTD
*Subject:
*Message:
Characters Remaining: (0/3000)