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IPB073N15N5ATMA1

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IPB073N15N5ATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.6V @ 160µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 61 nC @ 10 V

Rds On (Max) @ Id, Vgs : 7.3mOhm @ 57A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 8V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 150 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 4700 pF @ 75 V

Mounting Type : Surface Mount

Series : OptiMOS™-5

Supplier Device Package : PG-TO263-3-2

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 114A (Tc)

Power Dissipation (Max) : 214W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPB073

Description : MOSFET N-CH 150V 114A TO263-3

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N-Channel 150 V 114A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2

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