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SI7469DP-T1-GE3

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SI7469DP-T1-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : PowerPAK® SO-8

Gate Charge (Qg) (Max) @ Vgs : 160 nC @ 10 V

Rds On (Max) @ Id, Vgs : 25mOhm @ 10.2A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 80 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 4700 pF @ 40 V

Mounting Type : Surface Mount

Series : TrenchFET®

Supplier Device Package : PowerPAK® SO-8

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 28A (Tc)

Power Dissipation (Max) : 5.2W (Ta), 83.3W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SI7469

Description : MOSFET P-CH 80V 28A PPAK SO-8

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P-Channel 80 V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

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