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SI7129DN-T1-GE3

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SI7129DN-T1-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.8V @ 250µA

Operating Temperature : -50°C ~ 150°C (TJ)

Package / Case : PowerPAK® 1212-8

Gate Charge (Qg) (Max) @ Vgs : 71 nC @ 10 V

Rds On (Max) @ Id, Vgs : 11.4mOhm @ 14.4A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 3345 pF @ 15 V

Mounting Type : Surface Mount

Series : TrenchFET®

Supplier Device Package : PowerPAK® 1212-8

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 35A (Tc)

Power Dissipation (Max) : 3.8W (Ta), 52.1W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SI7129

Description : MOSFET P-CH 30V 35A PPAK1212-8

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P-Channel 30 V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8

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