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Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 1.1A (Ta)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : -
Manufacturer : Diodes Incorporated
Minimum Quantity : 1
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Operating Temperature : -55°C ~ 150°C (TJ)
FET Feature : -
Series : -
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 25V
Supplier Device Package : TO-92-3
Part Status : Active
Packaging : Bulk
Rds On (Max) @ Id, Vgs : 330 mOhm @ 3A, 10V
Power Dissipation (Max) : 850mW (Ta)
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 3V @ 1mA
Drain to Source Voltage (Vdss) : 60V
Description : MOSFET N-CH 60V 1.1A TO92-3
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