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SI4410DYPBF

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SI4410DYPBF

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 10 A

Mounting Style : SMD/SMT

Minimum Operating Temperature : - 55 C

Package / Case : SO-8

Maximum Operating Temperature : + 150 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 30 V

Packaging : Tube

Vgs th - Gate-Source Threshold Voltage : 1 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 20 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 20 V

Qg - Gate Charge : 30 nC

Manufacturer : IR / Infineon

Description : MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC

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The SI4410DYPBF,from IR / Infineon,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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