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Transistor Polarity : N-Channel
Technology : Si
Id - Continuous Drain Current : 20 A
Mounting Style : Through Hole
Package / Case : TO-220-3
Maximum Operating Temperature : + 150 C
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : 650 V
Packaging : Tube
Vgs th - Gate-Source Threshold Voltage : 2 V
Product Category : MOSFET
Rds On - Drain-Source Resistance : 150 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 25 V
Qg - Gate Charge : 35 nC
Manufacturer : STMicroelectronics
Description : MOSFET POWER MOSFET
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