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MMIX1X200N60B3H1

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MMIX1X200N60B3H1

Gate-Emitter Leakage Current : 200 nA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Pd - Power Dissipation : 520 W

Continuous Collector Current at 25 C : 175 A

Package / Case : SMDP-21

Maximum Operating Temperature : + 150 C

Packaging : Tube

Configuration : Single

Manufacturer : IXYS

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The MMIX1X200N60B3H1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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