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2DB1132R-13

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2DB1132R-13

Transistor Polarity : PNP

Product Category : Bipolar Transistors - BJT

Mounting Style : SMD/SMT

Maximum DC Collector Current : - 1 A

Collector- Emitter Voltage VCEO Max : - 32 V

Package / Case : SOT-89-3

Maximum Operating Temperature : + 150 C

Gain Bandwidth Product fT : 190 MHz

Configuration : Single

Collector- Base Voltage VCBO : - 40 V

Series : 2DB11

Emitter- Base Voltage VEBO : - 5 V

Collector-Emitter Saturation Voltage : - 125 mV

Manufacturer : Diodes Incorporated

Description : Bipolar Transistors - BJT 1000W -32Vceo

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The 2DB1132R-13,from Diodes Incorporated,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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