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BG 3130 H6327

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BG 3130 H6327

Transistor Polarity : N-Channel

Technology : Si

Product Category : RF MOSFET Transistors

Mounting Style : SMD/SMT

Gain : 24 dB

Package / Case : SOT-363

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 12 V

Packaging : Reel

Id - Continuous Drain Current : 25 mA

Manufacturer : Infineon Technologies

Description : RF MOSFET Transistors RF MOSFETS

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The BG 3130 H6327,from Infineon Technologies,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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