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MRF587

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MRF587

Transistor Polarity : NPN

Technology : Si

Product Category : RF Bipolar Transistors

Mounting Style : Through Hole

Transistor Type : Bipolar Power

Collector- Emitter Voltage VCEO Max : 17 V

Package / Case : Case244-04

Maximum Operating Temperature : + 200 C

DC Collector/Base Gain hfe Min : 50

Packaging : Tray

Manufacturer : ASI / Advanced Semiconductor, Inc.

Emitter- Base Voltage VEBO : 2.5 V

Continuous Collector Current : 200 mA

Description : RF Bipolar Transistors RF Transistor

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The MRF587,from ASI / Advanced Semiconductor, Inc.,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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